Inhalt

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   Preface
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  1 Fundamentals
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  1.1 Heusler alloys
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   1.1.1 Unit cell
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   1.1.2 Ferromagnetism
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   1.1.3 Half metallicity
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  1.2 Ordering on atomic scale
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   1.2.1 Ordering parameters
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   1.2.2 Determination of the disorder parameter
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   1.2.3 Evolution of structure factor with ordering
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  2 Preparation I - Co2MnSi thin films
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   2.1 The sputtering system
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   2.2 Annealing process
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   2.3 The choice of substrate
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  3 Characterization
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  3.1 Magnetic measurements
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   3.1.1 Magneto-optical Kerr effect (MOKE)
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   3.1.2 Alternating Gradient Magnetometer (AGM)
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  3.2 Transport measurements
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   3.2.1 Measurements at room temperature
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   3.2.2 Temperature dependence
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  3.3 Atomic arrangement on nanoscale
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   3.3.1 X-ray diffraction
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   3.3.2 Auger spectroscopy
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   3.3.3 XAS/XMCD
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   3.4 Determination of spin polarization
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   3.4.1 Magnetic tunnel junctions
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   3.4.2 Alternative techniques
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  4 Thin films of Co2MnSi
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  4.1 Polycrystalline films
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   4.1.1 Electrical behavior
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   4.1.2 Magnetic evolution
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   4.1.3 Analysis of microstructure
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  4.2 Textured films
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   4.2.1 Electrical behavior
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   4.2.2 Magnetic evolution
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   4.2.3 Analysis of microstructure
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   4.3 Conclusion - ordering and intrinsic parameters
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   4.4 Growth of Co2MnSi films
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   4.4.1 Surface morphology and roughness
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   4.4.2 Magnetism
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   4.4.3 Local ordering
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  5 Preparation II - magnetic tunnel junctions (MTJs)
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   5.1 Magnetic tailoring
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   5.2 The barrier
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   5.3 The stack - patterning
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   5.4 The final process layout
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  6 Spin polarization in thin Co2MnSi films
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   6.1 TMR effect amplitude and spin polarization realized
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   6.1.1 Quality of the interface I - electrical behavior
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   6.1.2 Quality of the interface II - atomic distribution
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   6.1.3 Co-termination at the interface
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   6.2 Spin polarization and local ordering
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  7 IETS - Inelastic electron tunneling spectroscopy
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   7.1 Experimental aspects
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   7.2 Results
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   Conclusion and outlook
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   A X-ray diffraction patterns
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   Publications and talks
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   Bibliography
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   Acknowledgment