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Bornemeier, Jan: Magnetoresistive elements in combination with Schottky barriers on gallium arsenide. 2005
Inhalt
Table of Contents
Preface
Experimental Idea
Theory and Basics
Magnetoresistive Effects
Tunnel Magneto Resistance Effect
Giant Magneto Resistance Effect
Metal Semiconductor Interfaces
Schottky's Model
Models with Interface States
Chemistry Dependent Models
Electrical Characterization of Schottky-Barriers
Ballistic Electrons in Transition Metals
Diffusive and Ballistic Transport
Spin Attenuation Lengths and Ballistic Magneto Current
Ballistic Electron Emission Microscopy
Scanning Tunnel Microscopy
BEEM
MR-junction/Schottky Hybrid Junctions
Spinvalve Transistors
TMR/Schottky Hybrid Junctions
Tunnel-Barrier/Spinvalve/Schottky-Barrier Hybrid Junctions
Fabrication and Characterization
Fabrication
Substrate Choice and Preparation
Metal Deposition
Lithography
Characterization Techniques
Electrical Characterization
Magnetic Characterization
Injection of Ballistic Currents via Tunnel/Schottky-Barrier Hybrid Junctions
Results from TMR/Schottky Hybrid Junctions
General Characterization of the TMR/Schottky Hybrid Junction
BMC
Spin Attenuation Lengths in Cobalt
Temperature Dependent Scattering
Results from Tunnel-Barrier/Spinvalve/Schottky-Barrier Hybrid Junctions
Ballistic Electron Emission Microscope Experiments
Fabrication
Magnetic and Electrical Characterization
BEEM Setup
Results
Spectroscopy and Magnetic Major-Loops
Topography and BEEM Pictures
Summary
Outlook
Bibliography
Publications and Conferences
Acknowledgements
Danksagung