TY  - JOUR
AB  - The mass-transport mechanisms that are responsible for the early stages (resistance change <1 percent) of electromigration damage in metals are poorly understood. A deeper understanding of these processes is important both for the direct application to metal lines in electronic devices and for expanding our basic knowledge of these complex phenomena. A major reason for our lack of understanding is that the structural changes that must take place during early-stage electromigration occur at extremely small length scales that are beyond the resolution capabilities of conventional electromigration experiments. We report in situ studies of early-stage electromigration using scanning tunneling microscopy. A single 2-my square region of a 2100-Å Ag film was studied under UHV conditions for over 200 h with current densities up to 4.5×10 to the power of 4 A/cm2. Although the temperature and resistivity of the sample remained nearly constant throughout this period, significant small-scale morphology changes occurred that were a result of the applied current.
DA  - 1993
DO  - 10.1103/PhysRevB.48.85
LA  - eng
IS  - 2
M2  - 858
PY  - 1993
SN  - ARRAY(0x7a822b8)
SP  - 858-863
T2  - Physical Review, B
TI  - In situ scanning-tunneling-microscopy studies of early-stage electromigration in Ag
UR  - https://nbn-resolving.org/urn:nbn:de:0070-pub-17753905
Y2  - 2024-11-22T04:34:57
ER  -