TY  - JOUR
AB  - The transport properties of electrons in Co/Cu multilayered thin films are of special interest for the giant magnetoresistance (GMR) of this system. The magnitude of this effect depends on the mean free paths and on the strength of the interface scattering which in turn are strongly related to film structure. In this article, we discuss the results of resistance and magnetoresistance measurements carried out during film growth. We characterize the electronic transport parameters of these films and the growth mechanism of the layers. The new technique of the in situ measurement of the magnetoresistance furthermore provides a tool to find correlations of the growth mechanism with the dependence of the GMR on the Co thickness.
DA  - 1994
DO  - 10.1063/1.355859
KW  - Mean free path
KW  - Film growth
KW  - Electric conductivity
KW  - Thickness
KW  - Magnetoresistance
KW  - Multilayers
KW  - Copper
KW  - Cobalt
KW  - Scattering
KW  - Interfaces
LA  - eng
IS  - 1
M2  - 362
PY  - 1994
SN  - 0021-8979
SP  - 362-367
T2  - Journal of applied physics
TI  - Electronic transport properties and thickness dependence of the giant magnetoresistance in Co/Cu multilayers
UR  - https://nbn-resolving.org/urn:nbn:de:0070-pub-17754312
Y2  - 2024-11-22T06:40:45
ER  -