TY  - JOUR
AB  - We report new measurements of circularly polarized recombination radiation from highly doped p-type GaAs emitted under impact of longitudinally polarized electrons with an initial kinetic energy varied between 2 and 10 eV. The work function of the target crystal is lowered by cesiation and oxidation of the surface. The results are discussed and compared with our earlier measurements on a clean GaAs crystal surface and with photoluminescence data.
DA  - 1990
DO  - 10.1103/PhysRevB.42.7242
LA  - eng
IS  - 11
M2  - 7242
PY  - 1990
SN  - 0163-1829
SP  - 7242-7244
T2  - Phys. Rev. B
TI  - Low-energy cathodoluminescence experiment with polarized electrons and a negative-electron-affinity GaAs target
UR  - https://nbn-resolving.org/urn:nbn:de:0070-pub-17771401
Y2  - 2024-11-22T07:38:47
ER  -