TY  - EDBOOK
AB  - The defect absorption in hydrogenated amorphous silicon (a-Si:H) photosensitive devices in the presence of
resonant absorbing silver nanoparticles (Ag NPs) is investigated. Defect states are created in the a-Si:H network
by the incorporated Ag NPs in their direct environment. The strong electromagnetic fields accompanied by the
localized surface plasmon (LSP) resonance of the Ag NPs enable high transition rates between the defect states
and the conduction band. This results in an observable signal for near infrared (NIR) photon energies in external
quantum efficiency (EQE) measurements. By applying different Ag NP size distributions to the devices the LSP
resonance is shifted together with a shift of the EQE peak observed for NIR energies. This indicates that the
available defect states in the a-Si:H bandgap are addressed by the LSP resonance. Dominant transitions take
place for electrons occupying defect levels having an energetic position equal to the LSP resonance energy. Boron
doping of the a-Si:H environment shifts the Fermi level towards or below the introduced defect states. These are
depleted and cannot contribute to sub bandgap photon absorption. This is an indication for the consistence of
the proposed model for resonant defect absorption of the bandgap defect states.
DA  - 2012
DO  - 10.1117/12.928684
KW  - localized surface plasmon resonance
KW  - silver nanoparticles
KW  - sub bandgap photocurrent
KW  - hydrogenated amorphous silicon
KW  - resonant defect absorption
KW  - impurity photovoltaic effect
LA  - eng
PY  - 2012
TI  - Plasmon induced NIR response of thin-film a-Si:H solar cells
UR  - https://nbn-resolving.org/urn:nbn:de:0070-pub-20886732
Y2  - 2024-11-22T11:44:57
ER  -