TY  - THES
AB  - Magnetoresistive sensors are widely used in sensor applications for magnetic field measurements. Currently these sensors mostly use the Anisotropic Magnetoresistive Effect (AMR) or the Giant Magnetoresistive Effect (GMR). Due to their unique properties sensors based on the TMR effect could be advantageous: They offer a higher MR-ratio, smaller lateral dimensions and a higher resistance which reduces the power consumption.
The work presented here is a purely industrial work, i.e. all experiments were performed directly on production tools at Sensitec GmbH in Mainz. In contrast to university research the focus was shifted to reproducibility and wafer uniformity instead of creating single perfect samples.
In this thesis a TMR layer stack consisting of sputtered CoFeB electrodes, one of them being exchange-coupled with IrMn, and an ion beam deposited MgO barrier is presented. This system was studied by many research groups and is now transferred to an industrial environment. In contrast to most publications, the MgO barrier is being prepared by ion beam deposition, a novel preparation method for TMR stacks.
Additionally Co2MnSi films for the use as potential electrodes were prepared by ion beam deposition and characterized structurally and magnetically.
DA  - 2010
KW  - Magnetischer Sensor
KW  - Tunnelmagnetowiderstand
KW  - Heuslersche Legierung
KW  - TMR
KW  - Heusler
KW  - Ionenstrahl-Deposition
KW  - MgO
KW  - CoFeB
KW  - Tunneling magnetoresistance
KW  - Magnetoresistive devices
KW  - MgO barrier
KW  - Ion-beam deposition
LA  - eng
PY  - 2010
TI  - Realization of TMR devices in an industrial environment
UR  - https://nbn-resolving.org/urn:nbn:de:hbz:361-17946
Y2  - 2024-11-21T21:55:24
ER  -