TY  - JOUR
AB  - We prepared magnesia, tantalum oxide and barium titanate based junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of longterm potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices towards their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms.
DA  - 2015
DO  - 10.3389/fnins.2015.00241
KW  - neuromorphic systems
KW  - synaptic plasticity
KW  - tunnel junction
KW  - Memristors
KW  - artificial synapses
LA  - eng
PY  - 2015
SN  - 1662-453X
T2  - Frontiers in Neuroscience
TI  - Tunnel junction based memristors as artificial synapses
UR  - https://nbn-resolving.org/urn:nbn:de:0070-pub-27595613
Y2  - 2024-11-22T09:00:56
ER  -