Fedl, Valentin: Development of infrared silicon BIB detectors with integrated linear amplificationEntwicklung von Silizium Infrarot BIB-Detektoren mit integrierter linearer Verstärkung. 2011
Inhalt
- Abstract
- Kurzfassung
- Contents
- Introduction
- The concept of a BIB detector with integrated linear amplification
- The properties of doped semiconductors at cryogenic temperatures
- The hydrogen model of shallow donor states
- The Poole-Frenkel effect
- The metal-insulator transition
- Mobility
- The investigation of the DEPFET at cryogenic conditions
- The investigation of BIB detector test structures
- Material and Design of the BIB structure device
- Setup for the BIB structure measurements
- Electron transport measurements
- The reset mechanism of the DEPFET at cryogenic temperatures
- The reset problem at cryogenic temperatures
- Model
- Electric field enhanced emission
- Electric field dependent recombination
- DEPFET Simulation
- Electron transport in the internal gate
- The finite difference method
- Experimental results and discussion
- Review of the experimental and theoretical methods
- Future prospects
- Summary of chapter 6
- Conclusion
- References