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Biermanns, Andreas: X-ray diffraction from single GaAs nanowiresRöntgenbeugung an einzelnen GaAs Nanodrähten. 2012
Inhalt
Zusammenfassung
Abstract
Contents
Glossary
Introduction
Semiconductor nanowires
Epitaxial nanowire growth
Crystal structures of Si and GaAs
Zinc-blende - wurtzite polytypism
Kinematic x-ray diffraction
Crystals and the reciprocal lattice
X-ray diffraction from nanostructures
Indexing reciprocal lattice points
Experimental realization
Coherent x-ray diffraction from GaAs nanowires grown by MOVPE
Growth details and description of samples
Average lattice parameters
Individual variations probed by x-ray diffraction
Microstructure of GaAs nanowires
Discussion
Structural evolution and relaxation of GaAS NWs on Si grown by MBE
Introduction
Ga-assisted NW growth
Evolution of average structural composition
Statistical distribution of zinc-blende twins and wurtzite segments
Distribution of ZB and WZ phased along the growth direction
Strain relaxation at the NW - substrate interface of single NWs
Average strain release and interface structure
Relaxation of thin nanowires
Summary
Strain in core-shell nanowire heterostructures
Nanowire heterostructures
Axial strain measurements in core-shell NWs
FEM simulations
Summary
Conclusions
Structure factors of zinc-blende and wurtzite materials
Resolution effects in reciprocal space maps
Surface sensitive diffraction techniques
Bibliography
Acknowledgements