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Bussone-Grifone, Genziana: Structure and electrical response of GaAs nanowires : looking for a correlation at the nano-scale. 2014
Inhalt
Abstract (English/Deutsch)
Contents
Acronyms
List of figures
List of tables
1. Introduction
2. GaAs nanowires
2.1 Crystal structure of GaAs nanowires
2.1.1 Structural polytypisms: wurtzite in GaAs
2.2 MBE growth and details on VLS growth mechanism
2.2.1 Polytype growth selection
2.3 Physics at the nano-scale
2.3.1 Characterization at the nano-scale
2.3.2 Electrical and optical properties: the band structure
2.3.3 Thermal properties
2.4 Applications
2.4.1 Electronic, photonic and optoelectronic applications
2.4.2 Piezo-electric applications
2.5 Selected techniques for structural characterizations
3. X-ray kinematic diffraction and synchrotron radiation
3.1 Reciprocal lattice and crystal planes
3.2 Basics of X-ray kinematic diffraction
3.2.1 Signals from nanostructures in reciprocal space
3.3 A synchrotron beamline: ESRF-ID01
3.4 Diffraction geometries
3.4.1 Coplanar symmetric and asymmetric geometries
3.4.2 Non coplanar grazing incidence geometry
3.4.3 Maps in reciprocal space
3.4.4 Specific sample configuration in the diffraction from a single nanowire
4. Grazing incidence X-ray diffraction of single GaAs nanowires
4.1 Probing the in-plane strain in single GaAs nanowires
4.2 GaAs nanowires at locations defined by focused-ion beams
4.3 The details about the experimental configuration
4.4 Determination of the in-plane strain
4.5 Summary
5. Correlation of electrical and structural properties in single GaAs nanowires
5.1 Electrical measurement: the first attempts with an AFM
5.2 The electrical and structural characterization of the same nanowire: samples and methods
5.3 The electrical characterization: theory and models
5.3.1 Contacts to a single nanowire
5.3.2 Multiple regimes in a NW characteristic
5.3.3 Thermoionic emission theory and Schottky model
5.4 Back-to-back Schottky model: the data analysis (method A)
5.5 Space Charge Limited Current model: the data analysis (method B)
5.6 Total series resistance, effective mobility and charge carrier density
5.7 The structural characterization
5.7.1 The effect of the tip contact on the NW structure
5.8 The correlation
5.9 Discussion on the present results and summary
5.10 The last attempts with STM
6. Strain impact of BCB polymer curing on embedded semiconductor nanostructures
6.1 BCB, an organic polymer for the planarization of nanostructures
6.2 Samples and experimental method
6.3 Elastic strain inherent to the thermal history of the fabrication method
6.4 Thermal expansion coefficients and polymer curing: the FEM simulation
6.5 Application of an external static electric field
6.6 Summary
7. Conclusions
Bibliography
Acknowledgements