Gruhler, Nico ; Gruhler, Matthias Nico: Near-field coupling in hybrid integrated photonic circuits. 2018
Inhalt
- Abstract
- List of Abbreviations
- 1 Introduction
- 2 Silicon Nitride as Basic Passive Integrated Photonics Platform
- 2.1 Silicon Nitride for On-Chip Photonic Structures
- 2.2 Basic Integrated Photonic Circuits
- 2.3 Fabrication Process for Silicon Nitride Circuits
- 2.4 Characterization of Silicon Nitride Integrated Photonic Devices
- 3 Near-Field Coupling to a Collective System: Atom Clad Waveguides
- 3.1 Properties of a Rubidium Atom Vapor
- 3.2 Atom-Light Interaction in Integrated Photonics
- 3.3 Fabrication Adaption for Silicon Nitride Devices Coupled to an Atom Vapor
- 3.3.1 Silica Window Substrate for a Vacuum Chamber
- 3.3.2 Borosilicate Glass Substrate for a Vapor Cell
- 3.4 Simulations of Atom Clad Waveguides
- 3.5 Measurement Setup for Atom Clad Waveguides
- 3.6 Experimental Results of the Integrated Atom-Light Interaction
- 3.6.1 Enhancement of the Grating Coupler Efficiency by Utilizing Metal Mirrors
- 3.6.2 Atomic Cladding Waveguide Spectroscopy
- 3.6.3 Mach-Zehnder Interferometers for Measurements of the Induced Phase Shift
- 3.6.4 Cavity Enhanced Interaction in Ring Resonators
- 3.6.5 Atom Clad Slot Waveguides
- 3.7 Summary and Outlook
- 4 Near-Field Coupling to and from Single Elements
- 4.1 Coupling to Graphene - 2D Carbon Material
- 4.2 GaSe Multilayer as Single-Photon Source
- 4.3 DBT Molecules as Single-Photon Source
- 4.4 Summary of Further Coupling Schemes Realized on the Si3N4 Platform
- 4.5 Conclusion
- 5 Integrated Optics in the Long Wave Infrared Regime
- 5.1 Introduction to LWIR Photonics and Materials
- 5.2 Integrated LWIR Photonics Applications
- 5.3 Silicon as Integrated Photonics Reference Material Platform
- 5.4 Diamond as Integrated Photonics Material Platform
- 5.4.1 Diamond Properties and Photonic Applications
- 5.4.2 Fabrication of Diamond Devices
- 5.4.3 Characterization of Diamond Devices in the NIR Regime
- 5.4.4 Functionalization of Diamond Circuits
- 5.5 LWIR Characterization of Silicon and Diamond Devices
- 5.5.1 LWIR Measurement Setup
- 5.5.2 Characterization of Silicon Devices
- 5.5.3 Characterization of Diamond Devices
- 5.6 Summary and Outlook
- 6 Conclusion
- A Appendix
- A.1 Refractive Indices and Dispersion
- A.2 Detailed Derivation of Ring Resonator Properties
- A.3 Sample Preparation and Fabrication Parameters
- A.3.1 Basic Si3N4 Devices
- A.3.2 Si3N4 Devices on Silica Window Substrate for a Vacuum Chamber
- A.3.3 Si3N4 Devices on Borosilicate Glass Substrate for a Vapor Cell
- A.3.4 Basic Silicon Devices
- A.3.5 Suspended Silicon Devices for LWIR Applications
- A.3.6 Basic Diamond Devices
- A.3.7 Diamond on AlN Devices for LWIR Applications
- A.3.8 Suspended Diamond Devices for LWIR Applications
- A.4 PEC Parameters
- A.5 Etching Process Details and Recipes
- A.6 Wafer Dicing Saw
- A.7 Basic Measurement Setup Components
- A.8 Simulation Details for Atom Clad Waveguides
- A.9 Atom Clad MZIs: Fit Parameters
- A.10 Mechanical Facet Polishing
- A.11 Details on Optical Components of the LWIR Setup
- Bibliography
- Zusammenfassung in deutscher Sprache
- List of Publications
- Curriculum Vitae
- Acknowledgments